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NXP Semiconductors
PESDxV4UK series
Very low capacitance unidirectional quadruple ESD protection arrays
6. Characteristics
Table 8. Characteristics
T amb = 25 ° C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V RWM
reverse standoff voltage
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
-
-
-
-
-
-
3.3
5.0
9.0
V
V
V
I RM
reverse leakage current
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
V RWM = 3.3 V
V RWM = 5.0 V
V RWM = 9.0 V
-
-
-
0.13
0.05
0.003
1
0.3
0.1
μ A
μ A
μ A
V BR
breakdown voltage
I R = 1 mA
C d
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
diode capacitance
f = 1 MHz;
5.3
6.47
11.4
5.6
6.8
12
5.9
7.14
12.7
V
V
V
V R = 0 V
V CL
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
clamping voltage
[1][2]
-
-
-
13
12.5
6.5
17
15
10
pF
pF
pF
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
I PP = 2.6 A
I PP = 2.4 A
I PP = 1.5 A
-
-
-
-
-
-
9.5
10
19
V
V
V
r dif
differential resistance
I R = 5 mA
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
-
-
-
5
2.5
10
16
8
30
Ω
Ω
Ω
[1]
[2]
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to pin 2.
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
? NXP B.V. 2010. All rights reserved.
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